TK3R3E03GL

EOL announced

Power MOSFET (N-ch single VDSS≤30V)

Description

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation U-MOSⅦ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Please contact us.

Package Information

Toshiba Package Name TO-220
Package Image Toshiba TK3R3E03GL Power MOSFET (N-ch single VDSS≤30V) product TO-220 package image
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)
10.16×15.1×4.45
Package Dimensions 보기

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 147 A
Power Dissipation PD 104 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.3 V
Gate threshold voltage (Min) Vth - 1.3 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 4.1
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 3.3
Input capacitance (Typ.) Ciss - 4350 pF
Total gate charge (Typ.) Qg VGS=10V 67 nC
Output charge (Typ.) Qoss - 18 nC
Reverse recovery time (Typ.) trr - 42 ns
Reverse recovery charge (Typ.) Qrr - 22 nC

Document

  • If the checkbox is invisible, the corresponding document cannot be downloaded in batch.

Jun,2016

기술 문의

문의

문의

자주 있는 문의

자주 있는 문의

Notes

back to list

Do you want to add this page to your favorites?

Do you want to remove this page from your favorites?

Membership registration required
A new window will open