TK3R3E03GL

停產產品

Power MOSFET (N-ch single VDSS≤30V)

產品概要

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation U-MOSⅦ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Please contact us.

包裝資訊

Toshiba Package Name TO-220
Package Image 東芝 TK3R3E03GL Power MOSFET (N-ch single VDSS≤30V)產品 TO-220 封裝圖片
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)
10.16×15.1×4.45
Package Dimensions 檢視

 Please refer to the link destination to check the detailed size.

絕對最大額定值

項目 符號 單位
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 147 A
Power Dissipation PD 104 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Max) Vth - 2.3 V
Gate threshold voltage (Min) Vth - 1.3 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 4.1
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 3.3
Input capacitance (Typ.) Ciss - 4350 pF
Total gate charge (Typ.) Qg VGS=10V 67 nC
Output charge (Typ.) Qoss - 18 nC
Reverse recovery time (Typ.) trr - 42 ns
Reverse recovery charge (Typ.) Qrr - 22 nC

文檔

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Jun,2016

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