Power supply ON/OFF control and reverse connection protection circuit (N-ch type)

Example of ON/OFF control and reverse connection protecting circuit using N-ch MOSFET for 12 V power lines

Power supply ON/OFF control and reverse connection protecting circuit (P-ch method)

Lineup

U-MOS Series 40 V N-ch MOSFET

Part number

Rated drain current [A]

On-resistance (Max)

[mΩ] @VGS = 10 V

Package

XPN3R804NC

40

3.8

TSON Advance(WF)

TK1R4S04PB

120

1.35

DPAK+

XPHR7904PS

150

0.79

SOP Advance(WF)

TPWR7904PB

150

0.79

DSOP Advance(WF)L

XPJR6604PB*

(200)

(0.66)

S-TOGLTM

XPQR3004PB

400

0.30

L-TOGLTM

* Under development (Values enclosed in parentheses are tentative specifications. Specifications are subject to change without notice.)

Automotive MOSFETs

Gate driver (for switch)

Part number

 TPD7104AF TPD7106F TPD7107F

Package

 PS-8 (2.8 x 2.9 mm) SSOP16 (5.5 x 6.4 mm) WSON10A (3 x 3 mm)
Function High side gate driver High side gate driver High side gate driver
Output 1 1 1

Features
  • Operating power supply
    voltage range: 5 to 18 V
  • Built-in power supply reverse
    connection protection function
    (Protective MOSFET control with back-to-back circuitry)
  • Operating power supply
    voltage range: 4.5 to 27 V
  • Built-in power supply reverse
    connection protection function
    (Protective MOSFET control with back-to-back circuitry)
  • Operating power supply voltage range: 5.75 to 26 V
  • Current sense output
  • Protective functions; overcurrent, overtemperature,
    GND disconnect, etc.
    reverse battery connection
  • Diagnosis output; overcurrent, load open, overtemperature, etc.

Automotive driver ICs

General purpose small signal MOSFET

Part number

SSM3K7002KF

SSM3J168F

SSM3J66MFV

Package

 S-Mini (SOT-346) S-Mini (SOT-346) VESM (SOT-723)

VDSS [V]

60

-60

-20

ID [A]

0.4

-0.4

-0.8

RDS(ON) @|VGS| = 4.5 V [Ω]

Typ.

1.2

1.4

0.31

Max

1.75

1.9

0.39

Drive voltage [V]

4.5

-4.0

-1.2

Polarity

N-ch

P-ch

P-ch

Automotive MOSFETs

General purpose small signal bipolar transistor

Package

SOT-23F

USM (SOT-323)

UFM (SOT-323F)*

S-Mini (SOT-346)

Classification

| VCEO | [V]

| IC | [mA]

NPN

PNP

NPN

PNP

NPN

PNP

General purpose

50

150

 

 

2SC4116

2SA1586

2SC2712

2SA1162

50

500

        

2SC3325

2SA1313

Low noise

120

100

    

2SC4117

2SA1587

2SC2713

2SA1163

High current

50

1700

      

2SA2195*

    
50 2000   TTA501        
50 2500 TTC501          

* indicates UFM package

Automotive bipolar transistors

Small signal bias resistor built-in transistor (BRT)

Part number

NPN (BRT)

PNP (BRT)

Package

ES6 (SOT-563)

RN1907FE

RN2907FE

US6 (SOT-363)

RN1901

RN2901

VCEO [V]

50

-50

IC [mA]

100

-100

Automotive bias resistor built-in transistors (BRTs)

TVS diode (for CAN communication)

Part number

DF3D18FU

DF3D29FU

DF3D36FU

Package

USM (SOT-323)

VESD [kV] @ISO 10605

±30

±30

±20

VRWM (Max) [V]

12

24

28

Ct (Typ. / Max) [pF]

9 / 10

6.5 / 8

RDYN (Typ.) [Ω]

0.8

1.1

1.5

Automotive TVS diodes

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* S-TOGLTM and L-TOGLTM are trademarks of Toshiba Electronic Devices & Storage Corporation.
* Other company names, product names, and service names may be trademarks of their respective companies.

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