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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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재고 확인 및 구매

Are there any reasons why forward transfer admittance, |Yfs|, is not specified in datasheets?

Also called transconductance (gm), |Yfs| is the ratio of the drain current variation at the output to the gate voltage variation at the input and is defined as |Yfs| = ∆ID / ∆VGS. Therefore, |Yfs| can be read from the ID-VGS curve or the VGS-based ID-VDS curve shown in datasheets.
You should read a |Yfs| value under actual usage conditions from these performance curves rather than using a |Yfs| value under the predefined conditions for the Electrical Characteristics table. That is why |Yfs| is not specified in datasheets.