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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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Figure 1 shows the avalanche measurement circuit and Figure 2 shows the avalanche voltage and current waveforms.
Avalanche energy EAS is calculated by using following formula.
| 1 BVDSS
EAS= ー LIAS2 ―――――――
2 BVDSS -VDD
|EAS||: Avalanche energy
|IAS||: Avalanche current
|BVDSS||: Drain-source avalanche voltage
|VDD||: Supply voltage
Avalanche ruggedness is the allowable energy in a single pulse.
For MOSFET’s avalanche, please refer to “Maximum Ratings: Power MOSFET Application Notes”