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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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A transistor is a semiconductor device used to amplify or switch electronic signals. Transistors are broadly divided into three types: bipolar transistors (bipolar junction transistors: BJTs), field-effect transistors (FETs), and insulated-gate bipolar transistors (IGBTs).
A bipolar transistor is a type of transistor that uses both electrons and holes as charge carriers. Two types of bipolar transistor are manufactured: npn and pnp.
A field-effect transistor is a unipolar device constructed with no pn junction in the main current-carrying path. Also, two types of field-effect transistor are manufactured: N-channel and P-channel.
An IGBT consists of a voltage-driven MOSFET followed by a high-current transistor.
Typical schematic symbols of these transistors are shown below: