Power MOSFET (N-ch 150V<VDSS≤250V)
Application Scope | Switching Voltage Regulators |
---|---|
Polarity | N-ch |
Generation | π-MOSⅦ |
Internal Connection | Single |
RoHS Compatible Product(s) (#) | Available |
Toshiba Package Name | DPAK |
---|---|
Package Image | |
Pins | 3 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
6.6×10.0×2.3 |
Package Dimensions | 보기 |
Land pattern dimensions | 보기 |
CAD data (Symbol, Footprint and 3D model) |
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Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | 250 | V |
Gate-Source voltage | VGSS | +/-20 | V |
Drain current | ID | 13 | A |
Power Dissipation | PD | 96 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 3.5 | V |
Gate threshold voltage (Min) | Vth | - | 1.5 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 250 | mΩ |
Input capacitance (Typ.) | Ciss | - | 1100 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 25 | nC |
Reverse recovery time (Typ.) | trr | - | 180 | ns |
Reverse recovery charge (Typ.) | Qrr | - | 1100 | nC |