EOL announced

Power MOSFET (N-ch single 30V<VDSS≤60V)

  • Related Reference Design(1)


Application Scope Switching Voltage Regulators / Power Management Switches / Motor Drivers
Polarity N-ch
Generation U-MOSⅥ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name DPAK
Package Image DPAK
Pins 3
Mounting Surface Mount
Package Dimensions 보기
Land pattern dimensions 보기
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 20 A
Power Dissipation PD 27 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.3 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 34
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 29
Input capacitance (Typ.) Ciss - 985 pF
Total gate charge (Typ.) Qg VGS=10V 15 nC


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