Power MOSFET (N-ch single 30V<VDSS≤60V)
Application Scope | DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers |
---|---|
Polarity | N-ch |
Generation | U-MOSⅧ-H |
Internal Connection | Single |
PPAP | Capable(*) |
AEC-Q101 | Qualified(*) |
RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
Toshiba Package Name | SOP Advance(WF) |
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Package Image | |
Pins | 8 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
5.0×6.0×0.95 |
Package Dimensions | 보기 |
Land pattern dimensions | 보기 |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | 60 | V |
Gate-Source voltage | VGSS | +/-20 | V |
Drain current | ID | 110 | A |
Power Dissipation | PD | 170 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 2.5 | V |
Gate threshold voltage (Min) | Vth | - | 1.5 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 4.1 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 2.1 | mΩ |
Input capacitance (Typ.) | Ciss | - | 6900 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 104 | nC |