SSM6L39TU

Not Recommended for New Design

Small Low ON resistance MOSFETs

Description

Application Scope Power Management Switches / High-Speed Switching
Polarity N-ch + P-ch
Generation U-MOSⅢ / U-MOSⅢ
Internal Connection Independent
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name SOT-363F (UF6)
Package Image Toshiba SSM6L39TU Small Low ON resistance MOSFETs product UF6 package image
Package Code SOT-363F
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.7
Package Dimensions 보기
Land pattern dimensions 보기
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *2

Download from UltraLibrarian® in your desired CAD format
*1 *2

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1) VDSS 20 V
Gate-Source voltage (Q1) VGSS +/-10 V
Drain current (Q1) ID 1.6 A
Drain-Source voltage (Q2) VDSS -20 V
Gate-Source voltage (Q2) VGSS +/-8 V
Drain current (Q2) ID -1.5 A
Power Dissipation PD 0.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.5V 247
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.8V 190
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=2.5V 139
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4V 119
Input capacitance (Q1) (Typ.) Ciss - 260 pF
Total gate charge (Q1) (Typ.) Qg VGS=4V 7.5 nC
Gate threshold voltage (Q2) (Max) Vth - -1.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4V 213
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-2.5V 294
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.8V 430
Input capacitance (Q2) (Typ.) Ciss - 250 pF
Total gate charge (Q2) (Typ.) Qg VGS=-4V 6.4 nC

Document

  • If the checkbox is invisible, the corresponding document cannot be downloaded in batch.

Sep,2016

Apr,2025

기술 문의

문의

문의

자주 있는 문의

자주 있는 문의

Notes

back to list
Membership registration required
A new window will open