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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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TPCF8105

Not Recommended for New Design

Power MOSFET (P-ch single)

Description

Application Scope Lithium-Ion Secondary Batteries / Power Management Switches
Polarity P-ch
Generation U-MOSⅥ
Internal Connection Single
RoHS Compatible Product(s) (#) Available
Assembly bases Malaysia

Package Information

Toshiba Package Name VS-8
Pins 8

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS -20 V
Gate-Source voltage VGSS +/-12 V
Drain current ID -6.0 A
Power Dissipation PD 2.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - -1.2 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 30
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 41
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 100
Input capacitance (Typ.) Ciss - 1100 pF
Total gate charge (Typ.) Qg VGS=-5V 17 nC

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Name Date

Dec,2016

 

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Notes

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