Part Number Search

Cross Reference Search

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Keyword Search

Parametric Search

Stock Check & Purchase

Innovation Centre

At the Toshiba Innovation Centre we constantly strive to inspire you with our technologies and solutions. Discover how to place us at the heart of your innovations.

Bidirectional charging is an essential part of a renewable future

Bidirectional charging is an essential part of a renewable future

Synchronizing renewable energy generation to peak demand times is proving challenging and raising concerns for future renewable grids. However, with the rapid growth of electric vehicles (EV) there will be a huge amount of energy stored in vehicles that are parked up and this can be tapped into in order to smooth demand peaks.

To take advantage of this opportunity, highly efficient bidirectional DC-DC converters that store energy into batteries and then return it to the grid highly efficiently will be essential.

Generally, high-voltage power converters have used silicon IGBTs, due to their high VCES. Wide-bandgap silicon carbide (SiC) switches now offer significant performance due to their low and stable RDS(ON) over temperature and support for higher switching frequencies. As an example, Toshiba’s 1200 V TW070J120B N-channel SiC MOSFET with built-in SiC Schottky barrier diode, delivers a 66% reduction in power losses over a comparable IGBT.

To support designers, Toshiba has developed a 5 kW, bidirectional DC-DC converter. This is based upon the TW070J120B on the high voltage side, the latest generation DTMOS superjunction N-channel TK49N65W5 MOSFETs on the DC load side, alongside TLP5214A gate drivers and TLP7920 optically-coupled isolation amplifier technology. Operating at a 50 kHz switching frequency, the reference design attains a conversion efficiency of 97% at 100% load in both directions.

A new window will open