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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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Innovation Centre

At the Toshiba Innovation Centre we constantly strive to inspire you with our technologies and solutions. Discover how to place us at the heart of your innovations.

New bidirectional 3-phase PFC reference design speeds up the development of EV charging solutions

New bidirectional 3-phase PFC reference design speeds up the development of EV charging solutions

With hundreds of millions of electric vehicles (EVs) being deployed in the next two decades, providing a comprehensive charging infrastructure is critical. Equally critical is the efficiency of these charging points.

Supporting this, Toshiba has developed a 3-phase 400 VAC power factor correction (PFC) reference design specifically for EV charging that requires minimal engineering resources to be implemented. This is based on wide-bandgap (WBG) technology and has bidirectional capabilities.

The reference design operates with a near-unity (>0.99) power factor and can deliver a 750 VDC output at 4 kW. The use of a totem pole PFC (TPPFC) design removes the need for a diode bridge rectifier, eliminating the associated losses and allowing efficiencies of 97% to be achieved.

Key to this design’s performance and success is the use of Toshiba’s TW070J120B N-channel silicon carbide (SiC) MOSFET switching device . Three-phase 400 VAC input means the switching elements need the capacity to cope with at least 1000 V. Normally IGBTs would be used, however, they are slower than SiC MOSFETs and have greater switching losses. By using SiC MOSFETs accelerated switching speeds and elevated withstand voltages can be achieved. With a built-in SiC Schottky barrier diode, the TW070J120B has a 1200 V withstand voltage easily meeting the requirement.