Products
Design & Development
Innovation Centre
At the Toshiba Innovation Centre we constantly strive to inspire you with our technologies and solutions. Discover how to place us at the heart of your innovations.
Knowledge
Highlighted Topics
Further Materials
Other
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
require 3 characters or more.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
require 3 characters or more.
While it is possible to design a fully featured gate driver with discrete components, it is rarely the best approach in terms of parts cost, design effort, assembly time, and board area required. Integrated drivers are available from Toshiba that enable a reliable, high-performance gate driver covering all of the available switch technologies at any power level. Unlike discrete designs, off-the-shelf parts already hold relevant safety certifications, thereby avoiding costs and delays.
Toshiba offers a range of integrated ‘smart’ gate drivers and continually expands their range. The TLP5214 and TLP5214A are primarily intended for driving IGBTs at speeds up to 50kHz. With an appropriate choice of supply voltage, the parts can be used to drive silicon and / or silicon carbide (SiC) MOSFETs. Due to the lower gate capacitance and gate charge for SiC MOSFETs, PWM frequencies of up to 650kHz are possible. The parts are able to supply +/-4A peak gate current, with propagation delays of less than 150ns and with a common-mode transient immunity of +/-35kV/µs.
Both devices offer full protection features including DESAT monitoring and shutdown, along with an internal Miller clamp. The TLP5214A version has the same base characteristics, but with a longer DESAT blanking time and longer soft-duration shutdown time for systems with high peak loads and noise levels.
Another Toshiba part, the TLP5231, is similar to the TLP5214 parts but is intended to be a pre-driver, followed by a buffer of a P- and N-channel MOSFET. These can be scaled for any desired power rating, and separate drive signals are made available for the two external MOSFET gates for maximum flexibility. Under-voltage lock-out is included, along with DESAT protection, with an externally adjustable soft shutdown time. In this part, a drive is provided to an externally fitted Miller clamp MOSFET. There are also detail differences in the propagation delay, DESAT thresholds and blanking charging current and timing. Alternatively, the TLP5212 and TLP5214 could also be used as pre-drivers.
Toshiba has published a whitepaper on configuring the features of smart gate drivers, download your free copy below: