Parallel Operation of MOSFET(TK62N60X) Application Circuit

This reference design provides example of simulation models/circuit and results for parallel operation using 600V MOSFET to increase output power.

Device and prastic inductance of PCB trace of parallel operation of MOSFET(TK62N60X) application circuit.
Simulation circuit of parallel operation of MOSFET(TK62N60X) application circuit.


  • Description of the MOSFET behavior on parallel operation by circuit simulation with TK62N60X(TO-247 package), a 600V DTMOSIV-H product, suitable for PFC circuit and primary side for AC-DC power supply.
  • Showing the point of note for parallel operation and offering the solution to achieve more output power.

Design Documents

Design Documents contain the documents below.

Design Data

Design Data contains the contents listed below.

Used Toshiba Items

Part Number Device Category Portion Usage Description
Power MOSFET (N-ch 500V<VDSS≤700V) N-ch MOSFET, 600 V, 0.04 Ω@10V, TO-247, DTMOSⅣ-H

Related Documents


Technical inquiry

Contact us

Contact us

Frequently Asked Questions

A new window will open