Parallel Operation of MOSFET(TK62N60X) Application Circuit

This reference design provides example of simulation models/circuit and results for parallel operation using 600V MOSFET to increase output power.

Device and prastic inductance of PCB trace
Simulation circuit

特性

  • MOSFET behavior in parallel operation analyzed via circuit simulation
  • Device: TK62N60X (TO-247 package), 600V DTMOSIV-H series
  • Suitable for PFC circuits and primary-side in AC-DC power supplies
  • Provides solution to achieve higher output power

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

使用東芝項目/產品

器件型號 器件目錄 使用部位・數量 說明
Power MOSFET (N-ch 500V<VDSS≤700V) N-ch MOSFET, 600 V, 0.04 Ω@10V, TO-247, DTMOSⅣ-H

Related Documents

We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.

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