型號查詢

交叉搜尋

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

關鍵字搜尋

參數搜尋

線上庫存查詢跟購買

Select Product Categories

Chapter II : Diodes : Forward Characteristic of Rectifier Diodes (IF-VF Characteristic)

Forward characteristic of rectifier diode varies according to current level and temperature.
At low-current region, VF is low at high temperature, and the opposite is true at high-current region.
In general, the diode should be used with a sufficient temperature margin below the Q point, which is the cross point of the above two  conditions.

Forward Characteristic of Rectifier Diodes(IF-VF Characteristic)

(1)Blue area where carrier mobility is dominant: VF decreases as temperature increases. 
Since the carrier moves easily when it gets hot, VF is lower than at low temperature.

(2)Red area where carrier collision dominates: VF increases as temperature increases. 
When a large current flows, a lot of carriers move. In the case of high temperature, the probability of collision between carriers increases and VF becomes higher than at low temperature.

Chapter II : Diodes

Related information

開啟新視窗