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Forward Characteristic of Rectifier Diodes (IF-VF Characteristic)

Forward characteristic of rectifier diode varies according to current level and temperature.
At low-current region, VF is low at high temperature, and the opposite is true at high-current region.
In general, the diode should be used with a sufficient temperature margin below the Q point, which is the cross point of the above two  conditions.

Forward Characteristic of Rectifier Diodes (I<sub>F</sub>-V<sub>F</sub> Characteristic)

(1)Blue area where carrier mobility is dominant: VF decreases as temperature increases. 
Since the carrier moves easily when it gets hot, VF is lower than at low temperature.

(2)Red area where carrier collision dominates: VF increases as temperature increases. 
When a large current flows, a lot of carriers move. In the case of high temperature, the probability of collision between carriers increases and VF becomes higher than at low temperature.

Chapter II : Diodes

Types of Diodes
Functions of Rectifier Diodes
FRDs (Fast Recovery Diodes)
Voltage Regulator Diodes (Zener Diodes)
TVS diode (ESD protection diode)
Difference between TVS Diodes and Zener Diodes (1)
Difference between TVS Diodes and Zener Diodes (2)
Variable-capacitance Diodes (Varicap Diodes)
Schottky Barrier Diodes (SBDs)
Reverse Recovery Characteristic of Schottky Barrier Diodes (SBDs)
Difference Depending on Metal of Schottky Barrier Diodes (SBDs)
Characteristics Application of Various Diodes

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