-
My ToshibaSemicon
- General Top View
-
SEMICONDUCTOR View
-
Applications
Body Electronics
xEV
In-Vehicle Infotainment
Advanced Driver-Assistance Systems (ADAS)
Chassis
Infrastructure
BEMS/HEMS
Factory Automation
Commercial Equipment
IoT Equipment
Healthcare
Wearable Device
Mobile
Computer Peripherals
-
Products
Products
-
Design & Development
Design & Development
Innovation Centre
At the Toshiba Innovation Centre we constantly strive to inspire you with our technologies and solutions. Discover how to place us at the heart of your innovations.
-
Knowledge
Knowledge
Highlighted Topics
Further Materials
Other
- Where To Buy View
-
My ToshibaSemicon
-
- STORAGE View
- COMPANY View
- Part Number Search
- Cross Reference Search
- Keyword Search
- Parametric Search
- Stock Check & Purchase
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
require 3 characters or more.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
require 3 characters or more.
MOS is sensitive to static electricity. How do you protect MOSFETs from static electricity?
To protect MOSFETs from static electricity, each input pin of CMOS transistors is equipped with a protection circuit to protect the input gate from static electricity. Generally, they are rated at 2 kV or higher according to Human Body Model (HBM).
The situations in which the device is directly subjected to discharge should be avoided, even though protection circuits are implemented. Despite the presence of these circuits, there remains a risk of device breakdown, damage, or deterioration.
Please also refer to “Semiconductor Handling Precautions and Requests” for general measures against static electricity.
Related Links
The following documents also contain related information.
