TPH6R008QM

Power MOSFET (N-ch single 60V<VDSS≤150V)

Description

Application Scope DC-DC Converters / High-Speed Switching / Switching Voltage Regulators
Polarity N-ch
Generation U-MOSⅩ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOP Advance(N)
Package Image SOP Advance(N)
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
4.9×6.1×1.0
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 80 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 59 A
Power Dissipation PD 135 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 3.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 8.4
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 6
Input capacitance (Typ.) Ciss - 2500 pF
Total gate charge (Typ.) Qg VGS=10V 38 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

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Jan,2024

Feb,2024

Feb,2024

Feb,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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