Power MOSFET (N-ch single 60V<VDSS≤150V)
Application Scope | DC-DC Converters / High-Speed Switching / Switching Voltage Regulators |
---|---|
Polarity | N-ch |
Generation | U-MOSⅩ-H |
Internal Connection | Single |
RoHS Compatible Product(s) (#) | Available |
Toshiba Package Name | SOP Advance(N) |
---|---|
Package Image | |
Pins | 8 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
4.9×6.1×1.0 |
Package Dimensions | 檢視 |
Land pattern dimensions | 檢視 |
Please refer to the link destination to check the detailed size.
項目 | 符號 | 值 | 單位 |
---|---|---|---|
Drain-Source voltage | VDSS | 80 | V |
Gate-Source voltage | VGSS | +/-20 | V |
Drain current | ID | 59 | A |
Power Dissipation | PD | 135 | W |
項目 | 符號 | 條件 | 值 | 單位 |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 3.5 | V |
Gate threshold voltage (Min) | Vth | - | 2.5 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=6V | 8.4 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 6 | mΩ |
Input capacitance (Typ.) | Ciss | - | 2500 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 38 | nC |
Output charge (Typ.) | Qoss | - | 40 | nC |
Reverse recovery time (Typ.) | trr | - | 41 | ns |
Reverse recovery charge (Typ.) | Qrr | - | 43 | nC |