Small Low ON resistance MOSFETs
Application Scope | Power Management Switches |
---|---|
Feature | 1.2-volt gate drive voltage |
Polarity | P-ch |
Generation | U-MOSⅥ |
Internal Connection | Single |
PPAP | Capable(*) |
AEC-Q101 | Qualified(*) |
RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
Toshiba Package Name | SOT-723 (VESM) |
---|---|
Package Image | |
JEITA | SC-105AA |
Package Code | SOT-723 |
Pins | 3 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
1.2×1.2×0.5 |
Package Dimensions | View |
Land pattern dimensions | View |
CAD data (Symbol, Footprint and 3D model) |
Download from UltraLibrarian® in your desired CAD format (Note) |
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Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | -20 | V |
Gate-Source voltage | VGSS | +6/-8 | V |
Drain current | ID | -800 | mA |
Power Dissipation | PD | 0.15 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | -1.0 | V |
Gate threshold voltage (Min) | Vth | - | -0.3 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 390 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=2.5V | 480 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.8V | 660 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.5V | 900 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.2V | 4.0 | Ω |
Input capacitance (Typ.) | Ciss | - | 100 | pF |
Total gate charge (Typ.) | Qg | VGS=-4.5V | 1.6 | nC |
Orderable part number (example) |
MOQ(pcs) | Reliability Information |
RoHS | AEC-Q100 AEC-Q101 |
Note |
---|---|---|---|---|---|
SSM3J66MFV,L3F | 8000 | Yes | - | General Use | |
SSM3J66MFV,L3XGF | 8000 | - | Yes | Yes (Note) | Unintended Use (Note) |
SSM3J66MFV,L3XHF | 8000 | - | Yes | Yes | Automotive Use |
(Note):For more information, please contact our sales or use the inquiry form on our website.
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