Feature | All SiC MOSFET type |
---|---|
Application | High power switching (Power conversion, Motor drive) |
Circuit Configuration | 2in1 |
RoHS Compatible Product(s) (#) | Available |
Toshiba Package Name | iXPLV |
---|---|
Mounting | Surface Mount |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain current (DC) | ID | 800 | A |
Drain-Source voltage | VDSS | 3300 | V |
Channel temperature | Tch | 175 | ℃ |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Drain-source on-voltage(Sense terminal) (Typ.) | VDS(on)sense | ID=800A Tch=25℃ VGS=20V |
1.3 | V |
Source-drain off-voltage(Sense terminal) (Typ.) | VSD(off)sense | IS=800A Tch=25℃ VGS=-6V |
2.1 | V |
Turn-on switching loss (Typ.) | Eon | - | 230 | mJ |
Turn-off switching loss (Typ.) | Eoff | - | 230 | mJ |
Reverse recovery loss (Typ.) | Err | - | 12 | mJ |
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