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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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MG800FXF2YMS3

New Product

SiC MOSFET Modules

Description

Feature All SiC MOSFET type
Application High power switching (Power conversion, Motor drive)
Circuit Configuration 2in1
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name iXPLV
Mounting Surface Mount

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain current (DC) ID 800 A
Drain-Source voltage VDSS 3300 V
Channel temperature Tch 175

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Drain-source on-voltage(Sense terminal) (Typ.) VDS(on)sense ID=800A
Tch=25℃
VGS=20V
1.3 V
Source-drain off-voltage(Sense terminal) (Typ.) VSD(off)sense IS=800A
Tch=25℃
VGS=-6V
2.1 V
Turn-on switching loss (Typ.) Eon - 250 mJ
Turn-off switching loss (Typ.) Eoff - 240 mJ
Reverse recovery loss (Typ.) Err - 10 mJ

Document

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Name Date

Aug,2022

 (Note) LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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