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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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MG800FXF2YMS3

Under development

SiC MOSFET Modules

Description

Feature All SiC MOSFET type
Application High power switching (Power conversion, Motor drive)
Circuit Configuration 2in1
RoHS Compatible Product(s) (#) Please contact us.
Assembly bases Japan

Package Information

Toshiba Package Name iXPLV

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain current (DC) ID 800 A
Drain-Source voltage VDSS 3300 V
Channel temperature Tch 175

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Drain-source on-voltage(Sense terminal) (Typ.) VDS(on)sense ID=800A
Tch=25degC
VGS=20V
1.6 V
Source-drain off-voltage(Sense terminal) (Typ.) VSD(off)sense IS=800A
Tch=25degC
VGS=-6V
2.3 V
Turn-on switching loss (Typ.) Eon - 250 mJ
Turn-off switching loss (Typ.) Eoff - 240 mJ
Reverse recovery loss (Typ.) Err - 11 mJ
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