TW092V65C

New Product

Power SiC MOSFETs

  • Related Reference Design(3)

Description

Application Scope Switching regulators
Polarity N-ch
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name DFN 8×8
Package Image Toshiba TW092V65C Power SiC MOSFETs product DFN 8×8 package image
Pins 5
Mounting Surface Mount
Width×Length×Height
(mm)
8.0×8.0×0.85
Package Dimensions 보기
Land pattern dimensions 보기
SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>(Note1)(Note2)

Download from SamacSys
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 650 V
Gate-Source voltage VGSS +25/-10 V
Drain current ID 27 A
Power Dissipation PD 111 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 5.0 V
Gate threshold voltage (Min) Vth - 3.0 V
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=18V 92
Input capacitance (Typ.) Ciss - 873 pF
Total gate charge (Typ.) Qg - 28 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

  • If the checkbox is invisible, the corresponding document cannot be downloaded in batch.

Jun,2025

Jun,2025

Jun,2025

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Reference Design

3kW Power Supply for Servers and Telecoms Using Surface-Mounted SiC MOSFET
In recent years, data centers have been growing larger and becoming more densely packed. As a result, power supplies for servers are now required to be more efficient, more powerful, and more space-saving, making high power density essential. By adopting our latest surface-mounted SiC devices, we have achieved high power density by separating the power supply from the main board and implementing it as a sub-board.
In addition to server applications, this solution can also be applied to telecom systems and other applications that use 48V.
This reference design provides explanations of the design points, usage methods, and adjustment methods of each part of the circuit, as well as design information including circuit diagrams, board patterns, etc. which can be useful for your design.
3kW Power Supply for AI Servers Using Surface-Mounted SiC MOSFET
With the rapid rise of generative AI, demand for high-performance AI servers is growing. This reference design provides a 3kW power supply for AI servers with high power requirements. By incorporating our surface-mount SiC MOSFETs, it achieves high power density.
Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.
3kW Power Supply for Electric Scooter Fast Chargers Using SiC MOSFET
In recent years, the growing focus on carbon neutrality has led to increased popularity of electric scooters, driving demand for fast battery charging. This reference design presents a 3kW power supply tailored for fast chargers used with electric scooters.
Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.

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