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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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재고 확인 및 구매

What are the capacitance characteristics of MOSFET.

Ciss, Crss and Coss are all important factors that influence switching characteristic of MOSFET.

  • Ciss: input capacitance (Ciss=Cgd+Cgs)
    ⇒Sum of gate-drain and gate-source capacitance. It influences delay time. The greater Ciss, the longer the delay time.
  • Crss: Reverse transfer capacitance (Crss=Cgd)
    ⇒Gate-drain capacitance. The greater Crss, the worse the drain current rising characteristics, which is disadvantageous for MOSFETs’ loss. Low capacitance is needed for high-speed driving.
  • Coss: Output capacitance (Coss=Cgd+Cds)
    ⇒Sum of gate-drain and drain-source capacitance. It influences turn-off characteristic and loss with light load. The greater Coss, the lower the turn-off dv/dt, which is advantageous for noise. But loss with light load increases.