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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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For devices that define a drain reverse current IDR or peak reverse current IDRP, do not exceed the absolute maximumratings.
A power MOSFET has a circuit structure between source and drain equivalent to a diode.
When reverse voltage is applied between the drain and source of the power MOSFET, current flows in this body diode as shown in the following Fig.
MOSFETs (Silicon type) which specify reverse drain current IDR (DC) and reverse drain current (pulsed) IDRP, must not send current over the IDR and IDRP of the absolute maximum rating.
It is necessary to take the rising temperature into consideration by the flowing current through the body diode.
The rising temperature does not exceed the channel temperature Tch of the absolute maximum rating.
Please consider temperature derating, and confirm that there is no problem with actual equipment.
For MOSFETs (Silicon type) which does not specify reverse drain current IDR (DC) and reverse drain current (pulsed) IDRP, contact your local Toshiba sales representative.
Please also refer to the following page.