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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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In what structures are IGBTs available?
The common structures of IGBTs include: (a) punch-through (PT), and (b) non-punch-through (NPT), and (c) thin-wafer punch-through (thin-wafer PT), which is also called field-stop (FS).
(d) Reverse-conducting IGBTs (RC-IGBTs) are a recent addition to IGBT variations in which part of the collector P region of the FS IGBT is replaced by an N region and a freewheeling diode is integrated like a MOSFET. The following table shows generations of IGBTs and their structures.
- PT IGBTs
The PT structure has been used since the inception of IGBTs. The P layer on the collector side is thick, and the forward voltage in the low-current region is high. - NPT IGBTs
NPT IGBTs appeared, following PT IGBTs. NPN IGBTs have high ruggedness and are used for hard switching and other inverter applications. - Thin-PT IGBTs
Thin-PT is one of the latest IGBT structures that uses thin-wafer technology to improve trade-offs between forward voltage drop and switching speed. Because of low loss, thin-PT IGBTs are widely used. - RC-IGBTs
RC-IGBTs use the latest thin-wafer technology and incorporate a fast-recovery diode (FRD). RC-IGBTs are available for voltage resonance and other applications.
