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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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The common structures of IGBTs include: (a) punch-through (PT), and (b) non-punch-through (NPT), and (c) thin-wafer punch-through (thin-wafer PT), which is also called field-stop (FS).
(d) Reverse-conducting IGBTs (RC-IGBTs) are a recent addition to IGBT variations in which part of the collector P region of the FS IGBT is replaced by an N region and a freewheeling diode is integrated like a MOSFET. The following table shows generations of IGBTs and their structures.