2SB906

Not Recommended for New Design

Power transistor for low frequency applications

Description

Application Scope Low frequency power amplifier
Polarity PNP
Comments Rank is specified by hFE range.
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name New PW-Mold
Package Image Toshiba 2SB906 Power transistor for low frequency applications product New PW-Mold package image
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
6.5×9.5×2.3
Package Dimensions 보기
Land pattern dimensions 보기
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *2

Download from UltraLibrarian® in your desired CAD format
*1 *2

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Collector Current IC -3 A
Collector power dissipation PC 20 W
Collector power dissipation PC 1 W
Collector-emitter voltage VCEO -60 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Transition frequency (Typ.) fT IC=-0.5A
VCE=-5V
9 MHz
DC Current Gain hFE (Max) hFE IC=-0.5A
VCE=-5V
200 -
DC Current Gain hFE (Min) hFE IC=-0.5A
VCE=-5V
60 -
Collector Emitter Saturation Voltage (Max) VCE(sat) IB=-300mA
IC=-3A
-1.7 V

Document

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Dec,2016

Mar,2019

*

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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