Toshiba Electronic Devices & Storage Corporation has developed U-MOS X-H 150 V process power MOSFET (metal-oxide-semiconductor field-effect transistor) series with dramatically improved on-resistance and charge characteristics for switching power supplies that require high-efficiency, such as power supplies for telecommunication base stations and power supplies for datacenter servers. It contributes to improvement of additional value such as efficiency improvement, compactness, and cost reduction of power supplies.
High-capacity contents that require high-rate communication such as video streaming is increasing and 5G (5th-generation mobile communications system) services which meet the high-rate communication was launched. Therefore, telecommunication base stations and datacenter servers become more and more and power supplies of those require high efficiency.
At the base stations, AC (alternating current) to DC (direct current) converters convert commercial AC voltage to DC -48 V which is common voltage of telecommunication power supplies, and then DC to DC converters convert the DC -48 V to an appropriate voltage which requires high frequency amplifiers or system control.
48 V power supplies become popular in datacenter servers that capacity is increasing, to reduce power loss of voltage bus.
High-performance MOSFETs are essential for switching power supplies for telecommunication base stations and datacenter servers that require high-efficiency and improving device performance become more important day by day.
It is necessary to reduce conduction loss when switching device is ON and switching loss during the device turn ON/OFF in order to improve efficiency of power supplies. In the MOSFET case, it is essential to improve certain characteristics such as on-resistance (RDS(ON)), gate-switch charge (Qsw), output charge (Qoss), and reverse-recovery charge (Qrr).
In general, cell pitch is fined to improve RDS(ON) value, but Qg, Qoss, and Qrr values become bigger by fining the cell pitch only. Therefore, following FOM (figure of merit) need to be reduced, product of the on-resistor and the gate-switch charge (RDS(ON)・Qsw), product of the on-resistor and the output charge (RDS(ON)・Qoss), and product of the on-resistor and the reverse-recovery charge (RDS(ON)・Qrr).
Aiming to reduce the both conduction loss and switching loss, the U-MOSX-H series 150 V MOSFET achieves 38 % reduction of RDS(ON), 12 % reduction of Ron・Qsw and 57 % reduction of Ron・Qrr* due to the device structure optimization and fine process technology based on conventional generation device structure.
(*Standard (STD) product case, compared to conventional generation U-MOSVIII-H)
Products with internal high-speed diode (HSD) which can reduce reverse recovery loss and spike voltage that life-time control technology applies to are also added into the product lineup. Furthermore, the HSD type products reduce 74 % of Ron・Qrr compared with the STD type products.
U-MOS X-H products also support high temperature operation up to 175 °C. (Up to 150 °C for conventional generation U-MOSVIII-H products)
The mentioned above contributes to improvement of additional value such as efficiency improvement, compactness, and cost reduction of power supplies.
Follow the links below for reference design information using 150 V MOSFET
1 kW Non-Isolated Buck-Boost DC-DC Converter for Telecommunication Equipment
3-Phase Multi-Level Inverter using MOSFET
1 kW Full-Bridge DC-DC Converter