TK30J25D

Not Recommended for New Design

Power MOSFET (N-ch 150V<VDSS≤250V)

Description

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation π-MOSⅦ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TO-3P(N)
Package Image Toshiba TK30J25D Power MOSFET (N-ch 150V&lt;VDSS&le;250V) product TO-3P(N) package image
JEITA SC-65
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)
15.5×20.0×4.5
Package Dimensions 보기
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(Note1)

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(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 250 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 30 A
Power Dissipation PD 260 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 3.5 V
Gate threshold voltage (Min) Vth - 1.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 60
Input capacitance (Typ.) Ciss - 4300 pF
Total gate charge (Typ.) Qg VGS=10V 100 nC
Reverse recovery time (Typ.) trr - 270 ns
Reverse recovery charge (Typ.) Qrr - 2600 nC

Document

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Mar,2026

Mar,2026

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