TPH2R70AR5

New Product

Power MOSFET (N-ch single 60V<VDSS≤150V)

  • Related Reference Design(1)

Data sheet

TPH2R70AR5 Data sheet/Japanese[May,2025]PDF: 790KB

Data sheet

TPH2R70AR5 Data sheet/English[Apr,2025]PDF: 667KB

Simulation Model

PSpice Model[May,2025]ZIP: 42KB

Simulation Model

LTspice Model[May,2025]ZIP: 49KB

Simulation Model

SIMetrix Model[May,2025]ZIP: 10KB

Thermal Simulation Model

Simplified CFD Model[Jan,2026]ZIP: 8KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

Application Note

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

Application Note

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

Application Note

Avalanche energy calculation[Mar,2020]PDF: 562KB

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

Application Note

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

Application Note

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

Application Note

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

Application Note

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

Application Note

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

Application Note

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

Application Note

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

Application Note

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

Application Note

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

Application Note

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

Data sheet

TPH2R70AR5 Data sheet/Japanese[May,2025]PDF: 790KB

Data sheet

TPH2R70AR5 Data sheet/English[Apr,2025]PDF: 667KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

Application Note

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

Application Note

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

Application Note

Avalanche energy calculation[Mar,2020]PDF: 562KB

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

Application Note

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

Application Note

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

Application Note

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

Application Note

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

Application Note

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

Application Note

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

Application Note

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

Application Note

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

Application Note

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

Application Note

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[May,2025]ZIP: 42KB

Simulation Model

LTspice Model[May,2025]ZIP: 49KB

Simulation Model

SIMetrix Model[May,2025]ZIP: 10KB

Thermal Simulation Model

Simplified CFD Model[Jan,2026]ZIP: 8KB

Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

Description

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOS11-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOP Advance(N)
Package Image Toshiba TPH2R70AR5 Power MOSFET (N-ch single 60V&lt;VDSS&le;150V) product SOP Advance(N) package image
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)		 4.9×6.1×1.0
Package Dimensions 보기
Land pattern dimensions 보기
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>(Note1)(Note2)

Download from SamacSys
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 100 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 190 A
Power Dissipation PD 210 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 4.3 V
Gate threshold voltage (Min) Vth - 2.9 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=8V 3.6 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 2.7 mΩ
Input capacitance (Typ.) Ciss - 4105 pF
Total gate charge (Typ.) Qg VGS=10V 52 nC
Output charge (Typ.) Qoss - 106 nC
Reverse recovery time (Typ.) trr - 52 ns
Reverse recovery charge (Typ.) Qrr - 55 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

  • If the checkbox is invisible, the corresponding document cannot be downloaded in batch.

May,2025

May,2025

May,2025

Jan,2026

(Note1)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

(Note2)

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

Reference Design

300W Isolated DC-DC Converter(Upgraded)
This design supports a wide input voltage range of DC 36 to 75V and provides a DC 12V output with a power capacity of 300W. Thanks to replacement of Toshiba latest MOSFET and digital isolator, and circuit optimization, it achieves higher efficiency at whole load condition compared with the existing reference design with the same topology.
We provide design information including key circuit design points, usage instructions, adjustment methods for each section, circuit diagrams, and PCB layout data to support your development.
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