XPN1300ANC

Power MOSFET (N-ch single 60V<VDSS≤150V)

Description

Application Scope Automotive / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name TSON Advance(WF)
Package Image TSON Advance(WF)
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.3×3.6×0.85
Package Dimensions 보기
Land pattern dimensions 보기
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 100 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 30 A
Power Dissipation PD 100 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 24.2
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 13.3
Input capacitance (Typ.) Ciss - 1470 pF
Total gate charge (Typ.) Qg VGS=10V 28 nC
Purchase and Sample
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You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Jun,2021

Jul,2021

Mar,2023

Dec,2023

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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Notes

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