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600V Power MOSFETs with Built-in Fast-Recovery Diodes for High-Efficiency Power Supplies
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added the "DTMOSVI 600V HSD (High-Speed Diode)"—N-channel power MOSFETs with built-in fast-recovery diodes—to the DTMOSVI 600V Series featuring a super junction structure. This series is suitable for applications such as data center servers, industrial equipment switching power supplies, and power conditioners for photovoltaic systems. The six new products are "TK034N60Z5, TK055N60Z5, and TK073N60Z5" in TO-247 packages; "TK055U60Z5 and TK073U60Z5" in TOLL packages; and "TK077V60Z5" in DFN8×8 packages.
The new products employ lifetime control technology[1] to enhance the reverse recovery characteristics of the body diode. This improves reverse recovery performance, which is critical for bridge and inverter circuit applications. Compared to Toshiba’s existing DTMOSVI 600V series products without built-in fast-recovery diodes, the reverse recovery time (trr) has been reduced by approximately 60%[2], and the reverse recovery charge (Qrr) by approximately 85%[2]. In the DTMOSVI 600V series, including the new products, optimized gate design and process reduce the figure of merit "drain-source On-resistance×total gate charge (RDS(ON)×Qg)" by approximately 36%[3], and "drain-source On-resistance×gate-drain charge (RDS(ON)×Qgd)" by approximately 52%[3] compared to Toshiba’s previous generation, the DTMOSIV-H series with the same voltage rating.
As a result, conduction, drive, and switching losses are reduced, contributing to higher efficiency in power supply circuits.
Toshiba offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available. Online Circuit Simulator available on Toshiba’s website allows users to easily verify circuit operation without the hassle of building a simulation environment and downloading element models.
Toshiba will continue to expand the DTMOSVI series lineup to improve the efficiency of switched-mode power supplies for industrial equipment, aiming to achieve carbon neutrality.
Notes:
[1] A technology that intentionally introduces defects into a semiconductor to enhance carrier recombination speed.
[2] Based on Toshiba's actual measurements (Comparison between Toshiba's existing product TK055U60Z1 and the new product TK055U60Z5.)
trr, Qrr measurement conditions: VDD=400V, VGS=0V, IDR=20A, -dIDR/dt=100A/μs, Ta=25°C
[3] Based on Toshiba's calculated estimate values
RDS(ON) measurement conditions: VGS=10V, Ta=25°C
Qg, Qgd measurement conditions: VDD≈400V, VGS=10V, Ta=25°C
Features
- Built-in fast-recovery diodes
- Low drain-source On-resistance×gate-drain charge (RDS(ON)×Qgd)
Explanation of Features
1. Built-in fast-recovery diodes
![Figure 1. Comparison of t<sub>rr</sub><sup>[2]</sup> and Q<sub>rr</sub><sup>[2]</sup> between DTMOSVI 600V HSD and existing DTMOSVI 600V](/content/dam/toshiba-ss-v3/master/en/semiconductor/product/mosfets/articles/600v-power-mosfets-with-built-in-fast-recovery-diodes-for-high-efficiency-power-supplies_features_1_en.png)
The new products employ lifetime control technology[1] to enhance the reverse recovery characteristics of body diodes. This improves reverse recovery performance, which is critical for bridge and inverter circuit applications.Compared to Toshiba’s existing DTMOSVI 600V series products without built-in fast-recovery diodes, the reverse recovery time (trr) has been reduced by approximately 60%[2], and the reverse recovery charge (Qrr) by approximately 85%[2].
2. Low drain-source On-resistance×gate-drain charge (RDS(ON)×Qgd)
In the DTMOSVI 600V series, including the new products, optimized gate design and process reduce the figure of merit "drain-source On-resistance×gate-drain charge (RDS(ON)×Qgd)" by approximately 52%[3] compared to Toshiba’s previous generation, the DTMOSIV-H series with the same voltage rating. As a result, conduction, drive, and switching losses are reduced, contributing to higher efficiency in power supply circuits.
애플리케이션
- Switched-mode power supplies (for data center servers, etc.)
- Photovoltaic power conditioners
- Uninterruptible power supplies
Main Specifications
(Unless otherwise specified, Ta=25°C)
| Part number | Package name | Absolute maximum ratings | Electrical characteristics | Sample check & availability | |||||
|---|---|---|---|---|---|---|---|---|---|
| Drain-source voltage VDSS (V) | Drain current (DC) ID(A) | Drain-source On-resistance RDS(ON) (Ω) |
Total gate charge (gate-source plus gate-drain) Qg (nC) |
Gate-drain charge Qgd (nC) |
Input capacitance Ciss (pF) |
Reverse recovery time trr (ns) |
|||
| VGS=10V | VGS=10V | VGS=10V | VDS=300V | VDD=400V, -dIDR/dt= 100A/µs |
|||||
| Typ. | Typ. | Typ. | Typ. | Typ. | |||||
| TK034N60Z5 | TO-247 | 600 | 60 | 0.030 | 105 | 32 | 6200 | 160 |  |
| TK055N60Z5 | 40 | 0.048 | 66 | 20 | 3750 | 140 | |
||
| TK073N60Z5 | 32 | 0.063 | 50 | 17 | 2860 | 126 | |
||
| TK055U60Z5 | TOLL | 40 | 0.048 | 66 | 20 | 3750 | 140 | |
|
| TK073U60Z5 | 32 | 0.063 | 50 | 17 | 2860 | 126 | |
||
| TK077V60Z5 | DFN8×8 | 0.067 | |
||||||
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