Power MOSFET (N-ch 500V<VDSS≤700V)
Application Scope | Switching Voltage Regulators |
---|---|
Polarity | N-ch |
Generation | DTMOSⅥ |
Internal Connection | Single |
RoHS Compatible Product(s) (#) | Available |
Toshiba Package Name | DFN 8×8 |
---|---|
Package Image | |
Pins | 5 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
8.0×8.0×0.85 |
Package Dimensions | 보기 |
Land pattern dimensions | 보기 |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | 650 | V |
Gate-Source voltage | VGSS | +/-30 | V |
Drain current | ID | 18 | A |
Power Dissipation | PD | 150 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 4.0 | V |
Gate threshold voltage (Min) | Vth | - | 3.0 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 170 | mΩ |
Input capacitance (Typ.) | Ciss | - | 1635 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 29 | nC |
Reverse recovery time (Typ.) | trr | - | 290 | ns |
Reverse recovery charge (Typ.) | Qrr | - | 3300 | nC |