TK1Q90A

EOL announced

Power MOSFET (N-ch 700V<VDSS)

Description

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation π-MOSⅣ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name New PW-Mold2
Package Image New PW-Mold2
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)
6.5×5.5×2.3
Package Dimensions 보기
CAD data
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 900 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 1.0 A
Power Dissipation PD 20 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 4.0 V
Gate threshold voltage (Min) Vth - 2.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 9.0 Ω
Input capacitance (Typ.) Ciss - 320 pF
Total gate charge (Typ.) Qg VGS=10V 13 nC
Reverse recovery time (Typ.) trr - 550 ns
Reverse recovery charge (Typ.) Qrr - 2200 nC

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