TK560A60Y

Power MOSFET (N-ch 500V<VDSS≤700V)

Description

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation DTMOSⅤ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TO-220SIS
Package Image TO-220SIS
JEITA SC-67
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)
10.0×15.0×4.5
Package Dimensions 보기
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 600 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 7.0 A
Power Dissipation PD 30 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 4.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 560
Input capacitance (Typ.) Ciss - 380 pF
Total gate charge (Typ.) Qg VGS=10V 14.5 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Apr,2017

Feb,2019

Dec,2023

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TK560A60Y,S4X 50 Yes

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Notes

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