TPCP8204

Not Recommended for New Design

Power MOSFET (N-ch dual)

Description

Application Scope DC-DC Converters / Mobile Equipments / Motor Drivers
Polarity N-ch×2
Generation U-MOSⅣ
Internal Connection Independent
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name PS-8
Package Image Toshiba TPCP8204 Power MOSFET (N-ch dual) product PS-8 package image
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.8
Package Dimensions 보기
Land pattern dimensions 보기

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1/Q2) VDSS 30 V
Gate-Source voltage (Q1/Q2) VGSS +/-20 V
Drain current (Q1/Q2) ID 4.2 A
Power Dissipation PD 1.48 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1/Q2) (Max) Vth - 2.5 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=4.5V 77
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=10V 50
Input capacitance (Q1/Q2) (Typ.) Ciss - 190 pF
Total gate charge (Q1/Q2) (Typ.) Qg VGS=10V 4.6 nC

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