Feature | All SiC MOSFET type |
---|---|
Application | High power switching (Power conversion, Motor drive) |
Circuit Configuration | 2in1 |
RoHS Compatible Product(s) (#) | Available |
Toshiba Package Name | 2-153A1A |
---|---|
Package Image | |
Mounting | Surface Mount |
Width×Length×Height (mm) |
152×62×20.5 |
Package Dimensions | 보기 |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain current (DC) | ID | 600 | A |
Drain-Source voltage | VDSS | 1200 | V |
Channel temperature | Tch | 150 | ℃ |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Drain-source on-voltage(Sense terminal) (Typ.) | VDS(on)sense | ID=600A Tch=25℃ VGS=20V |
0.9 | V |
Source-drain off-voltage(Sense terminal) (Typ.) | VSD(off)sense | IS=600A Tch=25℃ VGS=-6V |
1.6 | V |
Turn-on switching loss (Typ.) | Eon | - | 25 | mJ |
Turn-off switching loss (Typ.) | Eoff | - | 28 | mJ |
Reverse recovery loss (Typ.) | Err | - | 0.8 | mJ |