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MOSFET Product lineup

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400V - 900V MOSFETs

The 400-V to 900-V MOSFETs are used for switching power supply and inverter motor applications. Toshiba offers super-junction MOSFET series suitable for high-output power supply applications and D-MOS (double-diffused) MOSFET series suitable for low-output power supply applications.

Lineups

N-ch Super Junction

Introduction

DTMOS  series

DTMOS is a super-junction MOSFET series suitable for quick charger,large scale power supply for industry, and other high-output power supply applications. A super-junction MOSFET provides lower on-resistance than a MOSFET in the same package of the π-MOS series. In other words, a super-junction MOSFET with the same on-resistance as for a MOSFET of the π-MOS series is available in a smaller package. Therefore, DTMOS is well suited to reducing the size and improving the efficiency of power supplies.

π-MOS  series

π-MOS is a D-MOS (double-diffused) MOSFET series suitable for low-output power supply applications, including 65-W or lower-wattage notebook PC and game console adapters. Since the switching speed of the π-MOS series is not so fast, it does not generate large EMI noise and is therefore easy to use.

Power Supply for Consumer Appliances

  • Packaging technology

    The four-pin TO-247-4L package uses a Kelvin connection for the gate-drive source terminal in order to reduce the inductance of the internal source wiring and thereby allow a MOSFET chip to achieve a high switching speed.
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Documents

Whitepaper

Whitepaper
Name outline Date of issue
Evolution of Devices Supporting Power
Electronics and Expansion of Technologies for
Mounting, Circuits, and Application to Products
8/2017

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Optimising power deisng through MOSFET efficiency and intergration 8/2017

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  • e-tool
Cordless Power Tools: Delivering High Output Power, Extended Operation and Smaller Form Factors 9/2017

coming soon

Dual side cooling package DSOP Advance: Thermal conductance innovation for power-MOSFET 8/2017

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  • TO-247-4L
Describes the features of the new package and an operation analysis using simulation 9/2017

coming soon

Describes the features of the DTMOSV series and the improvements from the previous series 9/2017

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Application note

Application note
Name outline Date of issue
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016
Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 8/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 8/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 8/2017

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Catalog

Catalog
Name outline Date of issue
Describes the lineups of MOSFET 12/2017
Describes the lineups of power and small-signal MOSFETs by package 3/2016

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.