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MOSFET Product lineup

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400V - 900V MOSFETs


  • Process technology

    Toshiba has developed the Gen-4 super-junction 600-V, 650-V and 800-V DTMOSⅣ MOSFET series. Fabricated using the state-of-the-art single epitaxial process, DTMOSⅣ provides a 30% reduction in Ron・A, a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSⅢ. A reduction in Ron・A makes it possible to house lower Ron chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies.

  • Features

    1. 30% reduction in Ron・A, a MOSFET figure of merit, compared to the predecessor (DTMOSⅢ)

    This figure compares the performance of DTMOSⅣ and its predecessor, DTMOSⅢ.

    2. Lower increase in on-resistance at high temperatures due to the use of a single epitaxial process

    This figure compares on-resistance increases at high temperatures between DTMOSⅣ and competitors' devices.

    3. 12% reduction in switching loss, Eoss, compared to the predecessor (DTMOSⅢ) owing to a reduction in Coss
    • DTMOS Ⅳ: Eoss Curve

    This figure shows the Eoss curve of DTMOSⅣ.

    • Efficiency Comparisons Among Products with the Same Ron

    This figure compares the efficiency of DTMOS series and competitors' devices with the same on-resistance.

    4. Available with a wide range of on-resistance, R DS(ON) : 0.9 Ω – 0.018 Ω max
    5. Various packaging options
    • Through-hole: TO-220, TO-220SIS, IPAK, I2PAK, TO-3P(N), TO-3P(L), TO-247
    • Surface-mount: DPAK, D2PAK

  • Development Roadmap

    This figure shows the development roadmap for the DTMOS series and competitors' devices.

  • Packaging technology

    The four-pin TO-247-4L package uses a Kelvin connection for the gate-drive source terminal in order to reduce the inductance of the internal source wiring and thereby allow a MOSFET chip to achieve a high switching speed. Power MOSFETs in the TO-247-4L package help further improve the efficiency of the high-efficiency medium to large switching power supplies (with a level required by 80 PLUS*1TITANIUM and 80 PLUS PLATINUM).read more


N-ch Super Junction



Name outline Date of issue
Evolution of Devices Supporting Power
Electronics and Expansion of Technologies for
Mounting, Circuits, and Application to Products

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Optimising power deisng through MOSFET efficiency and intergration 8/2017

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  • e-tool
Cordless Power Tools: Delivering High Output Power, Extended Operation and Smaller Form Factors 9/2017

coming soon

Dual side cooling package DSOP Advance: Thermal conductance innovation for power-MOSFET 8/2017

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  • TO-247-4L
Describes the features of the new package and an operation analysis using simulation 9/2017

coming soon

Describes the features of the DTMOSV series and the improvements from the previous series 9/2017

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Application note

Application note
Name outline Date of issue
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016
Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 8/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 8/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 8/2017

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Name outline Date of issue
Describes the lineups of MOSFET 12/2017
Describes the lineups of power and small-signal MOSFETs by package 3/2016



1) DTMOSⅣ(V DSS = 600 V) Product Lineup

2) DTMOSⅣ(VDSS = 600 V) High-Speed Switching Type product Lineup

max (Ω)
DFN8x8 TO-220 TO-220SIS TO-247 TO-247
0.125 - 0.135 TK25V60X TK25E60X TK25A60X TK25N60X TK25Z60X
0.088 - 0.098 TK31V60X TK31E60X TK31N60X TK31Z60X
0.065 TK39N60X TK39Z60X
0.040 TK62N60X TK62Z60X

3) DTMOSⅣ(VDSS = 600 V) with integrated High-Speed Diodes product Lineup

max (Ω)
DPAK D2PAK DFN8x8 TO-220 TO-220SIS TO-3P(N) TO-247
(0.99) TK5P60W5 TK5A60W5
0.65 - 0.67 TK7P60W5 TK7A60W5
0.54 - 0.56 TK8P60W5 TK8A60W5
0.45 TK10A60W5
0.23 - 0.24 TK16G60W5 TK16V60W5 TK16E60W5 TK16A60W5 TK16J60W5 TK16N60W5
0.175 - 0.185 TK20V60W5 TK20E60W5 TK20A60W5 TK20J60W5 TK20N60W5
0.14 - 0.15 TK25V60X5 TK25E60X5 TK25A60X5 TK25N60X5
0.099 - 0.109 TK31V60W5 TK31J60W5 TK31N60W5
0.074 TK39J60W5 TK39N60W5
0.045 TK62J60W5 TK62N60W5

4) DTMOSⅣ(VDSS = 650 V) product Lineup

max (Ω)
1.2 - 1.22 TK5P65W TK5Q65W TK5A65W
1.0 - 1.05 TK6P65W TK6Q65W TK6A65W
0.78 - 0.80
0.65 - 0.67 TK8P65W TK8Q65W TK8A65W
0.5 - 0.56 TK9P65W TK9Q65W TK9A65W
 0.39 - 0.44   TK11P65W TK11Q65W TK11A65W
0.25 TK14C65W TK14G65W TK14V65W TK14E65W TK14A65W TK14N65W
0.2 TK17C65W TK17V65W TK17E65W TK17A65W TK17N65W
0.11 TK28V65W TK28E65W TK28A65W TK28N65W
0.08 TK35A65W TK35N65W
0.055 TK49N65W

5) DTMOSⅣ(VDSS = 650 V) with integrated High-Speed Diodes product Lineup

max (Ω)
  I2PAK      D2PAK TO-220 TO-220SIS TO-247
0.3 TK14C65W5 TK14G65W5 TK14E65W5 TK14A65W5 TK14N65W5
0.23 TK17A65W5
0.13 TK28N65W5
0.095 TK35A65W5 TK35N65W5
  0.057    TK49N65W5

6) DTMOSV(VDSS = 600 V) product Lineup

max (Ω)
0.56 TK560P60Y TK560A60Y
0.38 TK380P60Y TK380A60Y
0.29 TK290P60Y TK290A60Y

7) DTMOSV(VDSS = 650 V) product Lineup

max (Ω)
0.56 TK560P65Y TK560A65Y
0.38 TK380P65Y TK380A65Y
0.29 TK290P65Y TK290A65Y

8) DTMOSⅣ(VDSS = 800 V) product Lineup

max (Ω)
TO-220 TO-220SIS
0.95 TK7E80W TK7A80W
0.55 TK10E80W TK10A80W
0.45 TK12E80W TK12A80W
0.29 TK17E80W TK17A80W
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MOSFETs Product Lineup

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