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State-of-the-art double-diffusion MOSFET(D-MOS)π-MOSIX series

Low noise

The π-MOS series adopts the D-MOS (Double Diffusion MOS) structure and the lineup offers a wide range of voltages from 200 V to 900 V. Among these products, we are offering the latest ninth-generation π-MOSIX series of 600-V-withstand-voltage products.
The π-MOSIX series is able to replace the conventional 600-V MOSVII series, which is well established in the marketplace. The design of double-diffusion structures has been optimized to achieve high efficiency, low noise, and high avalanche capability.

By optimizing chip design, our π-MOSIX series is able to achieve the same level of power conversion efficiency as our conventional π-MOSVII series and competitors' equivalent products, while reducing EMI noise. Consequently, in designing a switching power supply such as an adapter, it is possible to obtain the same characteristics as for conventional products without changing peripheral components other than the MOSFET, making it easy to replace conventional products.

In evaluating EMI (radiated) noise of a 65-W power notebook PC adapter, the TK750A60F of the π-MOSIX series has reduced radiation noise in both the horizontal and vertical directions (about 5 dB at peak) without changing the MOSFET's peripheral circuit parameters (capacitance between drain and source, series resistance of gates, etc.) compared with the TK10A60D (600V/0.75ΩMAX./ TO-220SIS packages), which is an product equivalent to our conventional π-MOSVII series.

π-MOSIX series MOSFETs

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