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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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400V - 900V MOSFETs

400V至900V的MOSFET用於開關電源和逆變器電機應用。東芝提供適用於高輸出電源應用的超結MOSFET系列和適用於低輸出電源應用的D-MOS(雙擴散)MOSFET系列。

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VDSS(V)
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RDS(ON)Max(Ω)|VGS|=10V
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All package dimensions are guaranteed in millimeters as mentioned on datasheet. Package dimension in inches is round to 2 significant digits converted with 1mm=0.0393701inch.

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

State-of-the-art super junction MOSFET DTMOSVI
The DTMOS series has a super junction structure capable of reducing the resistance of the drift layer even though it has a high withstand voltage. Our fourth-generation DTMOSIV series has adopted a single-epi process to achieve both low on-resistance and high-speed switching.
Comparisons of fiqures of merit

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LED Lighting
Multi Function Printer
Air Conditioner
Automotive Junction Box
Cordless Power Tool
Washing Machine
Microwave Oven
Uninterruptible power supply
Smart Plug
Programmable Logic Controller
IoT Sensor

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