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MOSFET Product lineup

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12V - 300V MOSFETs

Toshiba offers an extensive portfolio of low- to medium-VDSS MOSFETs in various packages ranging from ultra-small packages for small-signal applications to packages with a large current capacity for automotive applications. Toshiba has used each successive generation of trench-gate structures and fabrication processes to steadily reduce the drain-source on-resistance, RDS(ON), of its low-voltage power MOSFETs. In addition, Toshiba has continually optimized MOSFET cell structures to improve the trade-offs between drain-source on-resistance and charge characteristics, which are important figures of merit of MOSFETs for switching applications.

Lineups

Highlight

Latest U-MOSⅨ-H Series
The U-MOSⅨ-H series incorporates outstanding trench process and packaging technologies to provide the industry’s best-in-class performance.

Latest U-MOSⅨ-H Series

Feature

Low-Voltage Drive and  Low On-Resistance
Packaging trends for 12V - 300V MOSFETs
Thermally Enhanced DSOP Advance Package
Packaging for Low On-Resistance

Documents

Whitepaper
Name outline Date of issue
Evolution of Devices Supporting Power
Electronics and Expansion of Technologies for
Mounting, Circuits, and Application to Products
8/2017

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Optimizing power design through MOSFET efficiency and intergration 8/2017

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  • e-tool
Cordless Power Tools: Delivering High Output Power, Extended Operation and Smaller Form Factors 9/2017

coming soon

Dual side cooling package DSOP Advance: Thermal conductance innovation for power-MOSFET 8/2017

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Application note
Name outline Date of issue
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016
Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 8/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 8/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 8/2017

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.