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About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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The U-MOSⅨ-H series incorporates outstanding trench process and packaging technologies to provide the industry’s best-in-class performance. Fabricated with the latest process and the optimized cell structure, the U-MOSⅨ-H series provides greatly improved RDS(ON)×Qg, RDS(ON)×QSW and RDS(ON)×QOSS, which are important figures of merit for MOSFETs.
Consequently, the U-MOSⅨ-H series provides significant reductions in major losses including conduction loss, drive loss, switching loss, and output charge loss, which help improve the efficiency of power supply systems and reduce the MOSFET device temperature.
When the TPH1R306PL of the U-MOSⅨ-H 60V series is compared with a competitor's similar product, the RDS(ON)×QSW related to switching loss is reduced by 25% and the RDS(ON)×QOSS related to output charge loss is reduced by 32%.
When the TPH3R70APL of the U-MOSⅨ-H 100V series is compared with a competitor's similar product, the RDS(ON)×QSW related to switching loss is reduced by 15% and the RDS(ON)×QOSS related to output charge loss is reduced by 14%.
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