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SiC Schottky Barrier Diodes

SiC Schottky Barrier Diodes

SiC Schottky barrier diodes (SBDs) feature high reverse voltage ratings. In addition to SBDs with short reverse recovery time (trr), Toshiba provides 650-V SBDs with a junction barrier Schottky (JBS) structure that provide low leakage current (Ir) and high surge current capability required for switched-mode power supplies. These devices help improve the efficiency of switched-mode power supplies.

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The following table shows the characteristics of fast recovery diodes (FRDs) and SBDs fabricated with silicon (Si) and of SBDs fabricated with SiC. SiC diodes provide electrical characteristics required for power supply circuits that are difficult to achieve with silicon diodes.

Electrical characteristics and symbols
(Improvement direction)
Effect on circuits Si material SiC material
FRD* SBD SBD

SBD

(Improved JBS structure)

Reverse voltage, VR

(high)

Voltage surge during switching

★★★★

★★★★★

★★★★★

Leakage current, IR

(low)

Thermal runaway

★★

★★★

★★★★★

Forward Voltage, VF

(low)

Considerable effect on efficiency

★★★

★★★★★

★★★

★★★

Reverse recovery time, trr

(low)

Considerable effect on efficiency

★★★★★

★★★★★

★★★★★

Surge current, IFSM

(large)

Inrush current when switching on

★★★★★

★★

★★★

The greater the number of ★, the better.

* FRD: Fast recovery diode

Improved JBS structure to reduce the leakage current and increase the surge current capability

Improved JBS structure to reduce the leakage current and increase the surge current capability

SiC SBD with lower switching loss

SiC SBD with lower switching loss

High withstand voltage characteristics of SiC SBDs

High withstand voltage characteristics of SiC SBDs

Application

Because of the outstanding physical properties of SiC, Toshiba’s SiC Schottky barrier diodes (SBDs) with an improved JBS structure provide higher withstand voltage, lower leakage current, higher surge current capability, and lower reverse recovery charge than achievable with conventional SBDs. These diodes help reduce power losses and increase circuit frequency considerably when they are used in the power factor correction (PFC) circuits of high-efficiency power supplies for servers, communication base stations, and PCs and as freewheeling diodes in inverter circuits for photovoltaic power generators and motor drivers.

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Application Notes

Number Name Date
- 04/2019

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.