3rd generation SiC Schottky barrier diode

The 3rd generation Silicon Carbide (SiC) Schottky barrier diode (SBD) has a lineup of seven products parts of TO-220-2L package and 5 products of DFN8×8 package. It adopts the new schottky metal [note1], and it is equipped with 3rd generation SiC SBD chip, which optimized junction barrier schottky (JBS) [note2] structure of 2nd generation. As a result, we have achieved industry-leading lowest forward voltage 1.2 V (Typ.) [note3], which is 17 % lower than that of the 2nd generation 1.45 V (Typ.).  Our 3rd generation SiC SBD contribute to lower power consumption and higher output of various equipment, which is used for switching power supply application mainly, by the following features.

Features of the 3rd generation SiC SBD

1. VF × Qc [note4] trade-off improvement

We have improved the Forward voltage (VF) and the Total capacitive charge (QC) trade-off by adopting the new Schottky metal.
Below the comparison evaluation results using representative samples of TO-220-2L / 650 V / 10 A rating products of our 3rd and 2nd generations and other competitors products.

V<sub>F</sub> x Q<sub>c</sub> <sup>[note4]</sup> trade-off improvement

Measurement Condition
QC: VR=400 V, f = 1 MHz, Ta = 25 ℃

(Toshiba internal comparison, as of June 2023)

We have achieved higher Non-repetitive peak forward surge current (IFSM) by improving the conventional JBS structure.

High surge current capability

Measurement Condition
 IFSM: f = 50 Hz (halfsine wave, t = 10 ms), Tc = 25 ℃       

(Toshiba internal comparison, as of June 2023)

3. Low Reverse current (Leakage current)

We could get lower Reverse current (IR) similar with our 2nd generation by adopting JBS structure even through lower Forward voltage.

Low Reverse current (Leakage current)

Measurement Condition
IR: VR = 650 V, Ta = 25 ℃           

(Toshiba internal comparison, as of June 2023)

Efficiency improvement of power supply

On our Boost PFC test circuit, our 3rd generation SiC SBD achieved approximately 0.1 % efficiency improvement against 2nd generation at the 800W output condition.

Efficiency improvement of power supply

(Toshiba internal comparison, as of November 2021)

[Note 1] In Schottky barrier diodes, it is the metal that is joined to the semiconductor.
[Note 2] JBS: It is a structure which the p region is embedded in the n-regions of the semiconductor surface. When the reverse bias voltage increases, the depletion region extends between the p and n- regions thereby reducing laekage current.
[Note 3] As of June 2023.
[Note 4] VF × QC: Forward voltage × total capacitance charge, which is an index of the loss performance of SiC SBD. When you compare with the same current rating products, the smaller VF × QC achieves lower loss.

SiC schottky barrier diodes

Related information

See the following pages for various applications.

See the following pages for Application Notes.


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