3rd generation SiC Schottky barrier diode
The 3rd generation Silicon Carbide (SiC) Schottky barrier diode (SBD) has a lineup of seven products parts of TO-220-2L package and 5 products of DFN8×8 package. It adopts the new schottky metal [note1], and it is equipped with 3rd generation SiC SBD chip, which optimized junction barrier schottky (JBS) [note2] structure of 2nd generation. As a result, we have achieved industry-leading lowest forward voltage 1.2 V (Typ.) [note3], which is 17 % lower than that of the 2nd generation 1.45 V (Typ.). Our 3rd generation SiC SBD contribute to lower power consumption and higher output of various equipment, which is used for switching power supply application mainly, by the following features.
Features of the 3rd generation SiC SBD
1. VF × Qc [note4] trade-off improvement
We have improved the Forward voltage (VF) and the Total capacitive charge (QC) trade-off by adopting the new Schottky metal.
Below the comparison evaluation results using representative samples of TO-220-2L / 650 V / 10 A rating products of our 3rd and 2nd generations and other competitors products.
![V<sub>F</sub> x Q<sub>c</sub> <sup>[note4]</sup> trade-off improvement](/content/dam/toshiba-ss-v3/master/en/semiconductor/product/diodes/articles/3rd-generation-sic-schottky-barrier-diode_features_1_en.png)
Measurement Condition
QC: VR＝400 V, f ＝ 1 MHz, Ta ＝ 25 ℃
(Toshiba internal comparison, as of June 2023)
We have achieved higher Non-repetitive peak forward surge current (IFSM) by improving the conventional JBS structure.
Measurement Condition
IFSM: f = 50 Hz (halfsine wave, t = 10 ms), Tc ＝ 25 ℃
(Toshiba internal comparison, as of June 2023)
3. Low Reverse current (Leakage current)
We could get lower Reverse current (IR) similar with our 2nd generation by adopting JBS structure even through lower Forward voltage.
Measurement Condition
IR: VR ＝ 650 V, Ta ＝ 25 ℃
(Toshiba internal comparison, as of June 2023)
Efficiency improvement of power supply
On our Boost PFC test circuit, our 3rd generation SiC SBD achieved approximately 0.1 % efficiency improvement against 2nd generation at the 800W output condition.
(Toshiba internal comparison, as of November 2021)
[Note 1] In Schottky barrier diodes, it is the metal that is joined to the semiconductor.
[Note 2] JBS: It is a structure which the p region is embedded in the n-regions of the semiconductor surface. When the reverse bias voltage increases, the depletion region extends between the p and n- regions thereby reducing laekage current.
[Note 3] As of June 2023.
[Note 4] VF × QC: Forward voltage × total capacitance charge, which is an index of the loss performance of SiC SBD. When you compare with the same current rating products, the smaller VF × QC achieves lower loss.
SiC schottky barrier diodes
Related information
See the following pages for various applications.
See the following pages for Application Notes.
FAQ
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