-
My ToshibaSemicon
- General Top View
-
SEMICONDUCTOR View
-
ApplicationsAutomotive
Body Electronics
xEV
In-Vehicle Infotainment
Advanced Driver-Assistance Systems (ADAS)
Chassis
IndustrialInfrastructure
BEMS/HEMS
Factory Automation
Commercial Equipment
Consumer/PersonalIoT Equipment
Healthcare
Wearable Device
Mobile
Computer Peripherals
-
Products
Products
-
Design & Development
-
Knowledge
Knowledge
- Where To Buy View
-
My ToshibaSemicon
-
- STORAGE View
- COMPANY View
- Part Number Search
- Cross Reference Search
- Keyword Search
- Parametric Search
- Stock Check & Purchase
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
require 3 characters or more.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
require 3 characters or more.
SiC devices suitable for power supply circuits
SiC Schottky barrier diodes (SBDs) have achieved high breakdown voltages for SBDs, which are difficult to achieve with Si materials, and significantly reduced reverse-recovery times (charges) that could not be achieved with p-n junction diodes, such as Si-FRD(Fast Recovery Diode).
Our products have also improved the leakage current and surge current, which are drawbacks of SBD, by adopting an improved JBS structure.
As shown in the table below, SiC achieves various characteristics required for power supply circuits that have been difficult to realize with Si diodes.
| Electrical characteristics and symbols (Improvement direction) |
Effect on circuits | Si material | SiC material | ||
|---|---|---|---|---|---|
| FRD* | SBD | SBD | SBD |
||
| Reverse voltage, VR (high) |
Voltage surge during switching | ★★★★ | ★ | ★★★★★ | ★★★★★ |
| Leakage current, IR (low) |
Thermal runaway | ★★ | ★ | ★★★ | ★★★★★ |
| Forward Voltage, VF (low) |
Considerable effect on efficiency | ★★★ | ★★★★★ | ★★★ | ★★★ |
| Reverse recovery time, trr (low) |
Considerable effect on efficiency | ★ | ★★★★★ | ★★★★★ | ★★★★★ |
| Surge current, IFSM (large) |
Inrush current when switching on | ★★★★★ |
★★ | ★ | ★★★ |
The greater the number of ★, the better.
SiC schottky barrier diodes
Related information
Queries about purchasing, sampling and IC reliability
Stock Check & Purchase
require 3 characters or more.
| Part Number | Authorized Distributor | Stock Quantity | Date | Shopping Cart |
|---|
Through this website you are able to proceed to the website of our distributors ("Third Party Website") which is not under the control of Toshiba Corporation and its subsidiaries and affiliates (collectively "Toshiba"). The Third Party Website is made available to you as a convenience only and you agree to use the Third Party Website at your own risk. The link of the Third Party Website does not necessarily imply a recommendation or an endorsement by Toshiba of the Third Party Website. Please be aware that Toshiba is not responsible for any transaction done through the Third Party Website, and such transactions shall be subject to terms and conditions which may be provided in the Third Party Website.