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MOSFET Product lineup

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400V - 900V MOSFETs

The 400-V to 900-V MOSFETs are used for switching power supply and inverter motor applications. Toshiba offers super-junction MOSFET series suitable for high-output power supply applications and D-MOS (double-diffused) MOSFET series suitable for low-output power supply applications.


N-ch Super Junction
N-ch D-MOS


DTMOS  series

DTMOS is a super-junction MOSFET series suitable for quick charger,large scale power supply for industry, and other high-output power supply applications. A super-junction MOSFET provides lower on-resistance than a MOSFET in the same package of the π-MOS series. In other words, a super-junction MOSFET with the same on-resistance as for a MOSFET of the π-MOS series is available in a smaller package. Therefore, DTMOS is well suited to reducing the size and improving the efficiency of power supplies.

π-MOS  series

π-MOS is a D-MOS (double-diffused) MOSFET series suitable for low-output power supply applications, including 65-W or lower-wattage notebook PC and game console adapters. Since the switching speed of the π-MOS series is not so fast, it does not generate large EMI noise and is therefore easy to use.

Power Supply for Consumer Appliances

  • Packaging technology

    The four-pin TO-247-4L package uses a Kelvin connection for the gate-drive source terminal in order to reduce the inductance of the internal source wiring and thereby allow a MOSFET chip to achieve a high switching speed.
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Name outline Date of issue
Evolution of Devices Supporting Power
Electronics and Expansion of Technologies for
Mounting, Circuits, and Application to Products

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Optimising power deisng through MOSFET efficiency and intergration 8/2017

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Cordless Power Tools: Delivering High Output Power, Extended Operation and Smaller Form Factors 10/2017

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Describes the features of the new package and an operation analysis using simulation 9/2017

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Application note

Application note
Name outline Date of issue
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 11/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 11/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 11/2017

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describes how to reduce the chip temperature of discrete semiconductor devices. 12/2017
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016
Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017


Name outline Date of issue
Describes the lineups of power and small-signal MOSFETs by package 3/2016


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MOSFETs Product Lineup

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.