This is the reference design for driving gates of the SiC MOSFET modules used in power conversion devices for industrial motor drives, etc. It can drive the gates of the SiC MOSFET modules with large currents by using external buffer MOSFETs.
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Power supply voltage for control | DC24V |
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Number of driving channels | 2 ch:Low-side, High-side |
Gate control signal input | 5V CMOS |
Gate drive output | +20V (Typ.) / -6.7V (Typ.) |
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Part Number | Device Category | Portion Usage | Description |
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Photocoupler (photo-IC output) | Pre driver・2 | Photocoupler (photo-IC output), Power device pre-driver, IOP=+/-2.5 A, 5000 Vrms, SO16L | |
Power MOSFET (P-ch single) | Turn on buffer・2 | P-ch MOSFET, -40 V, 0.025 Ω@10V, SOP-8, U-MOSⅥ | |
Small Low ON resistance MOSFETs | Turn off buffer・4 | N-ch, MOSFET, 40V, 12A, 18mΩ@4.5V, TSOP6F | |
Low Dropout (LDO) Linear Voltage Regulator | Generates control power supply voltage・4 | High voltage, Low quiescent current, Fast load transient CMOS Linear Regulator | |
Small-signal MOSFET | Input signal drive・2 | N-ch MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-416(SSM) | |
Transistor for low frequency small-signal amplification | Fault detection signal output・2 | NPN Bipolar Transistor, 50 V, 0.15 A, SOT-723(VESM) |
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