In recent years, SiC MOSFET modules have become popular compared to conventional IGBT modules as they have a smaller size and lower loss, which is useful in power conversion applications such as industrial motor drives and railway inverters. This is a gate drive circuit with various protection functions which can safely drive a SiC MOSFET module.
This design uses the TLP5231 pre-driver coupler, which is capable of high-current gate drive with external buffer MOSFETs and has various built-in protection functions to implement the isolated-gate drive of a high-current/high-voltage SiC MOSFET module. It consists of two channels, high-side and low-side, on a 62mm x 100mm board and can be installed on Toshiba dual MOSFET modules.
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Power supply voltage for control | DC24V |
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Number of driving channels | 2 ch:Low-side, High-side |
Gate control signal input | 5V CMOS |
Gate drive output | +20V (Typ.) / -6.7V (Typ.) |
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Part Number | Device Category | Portion Usage | Description |
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Photocoupler (photo-IC output) | Pre driver・2 | Photocoupler (photo-IC output), Power device pre-driver, IOP=+/-2.5 A, 5000 Vrms, SO16L | |
Power MOSFET (P-ch single) | Turn on buffer・2 | P-ch MOSFET, -40 V, 0.025 Ω@10V, SOP-8, U-MOSⅥ | |
Small Low ON resistance MOSFETs | Turn off buffer・4 | N-ch, MOSFET, 40V, 12A, 18mΩ@4.5V, TSOP6F | |
Low Dropout (LDO) Linear Voltage Regulator | Generates control power supply voltage・4 | High voltage, Low quiescent current, Fast load transient CMOS Linear Regulator | |
Small-signal MOSFET | Input signal drive・2 | N-ch MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-416(SSM) | |
Transistor for low frequency small-signal amplification | Fault detection signal output・2 | NPN Bipolar Transistor, 50 V, 0.15 A, SOT-723(VESM) |
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